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BLF6G10LS-200

NXP Semiconductors
Part Number BLF6G10LS-200
Manufacturer NXP Semiconductors
Description Power LDMOS transistor
Published Jul 29, 2009
Detailed Description www.DataSheet4U.com BLF6G10LS-200 Power LDMOS transistor Rev. 01 — 18 January 2008 Preliminary data sheet 1. Product p...
Datasheet PDF File BLF6G10LS-200 PDF File

BLF6G10LS-200
BLF6G10LS-200

Overview
www.
DataSheet4U.
com BLF6G10LS-200 Power LDMOS transistor Rev.
01 — 18 January 2008 Preliminary data sheet 1.
Product profile 1.
1 General description 200 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz.
Table 1.
Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit.
Mode of operation 2-carrier W-CDMA [1] f (MHz) 869 to 894 VDS (V) 28 PL(AV) (W) 40 Gp (dB) 20 ηD (%) 27 ACPR (dBc) −41[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.
5 dB at 0.
01 % probability on CCDF per carrier; carrier spacing 5 MHz.
CAUTION This device is sensitive to ElectroStatic Discharge (ESD).
Therefore care should be...


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