BLF6G10-45
Power LDMOS
transistor
Rev.
01 — 3 February 2009 Product data sheet
1.
Product profile
1.
1 General description
45 W LDMOS power
transistor for base station applications at frequencies from 800 MHz to 1000 MHz.
Table 1.
Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.
Mode of operation 2-carrier W-CDMA
[1]
f (MHz) 920 to 960
VDS (V) 28
PL(AV) (W) 1.
0
Gp (dB) 22.
5
ηD (%) 7.
8
ACPR (dBc) −48.
5[1]
Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.
5 dB at 0.
01 % probability on CCDF per carrier; carrier spacing 5 MHz
CAUTION This device is sensitive to ElectroStatic Discharge (ESD).
Therefore care should...