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Freescale Semiconductor Technical Data
Document Number: MRFE6S9201H Rev.
1, 12/2008
RF Power Field Effect
Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz.
The high gain and broadband performance of these devices make them ideal for large - signal, common - source amplifier applications in 28 volt base station equipment.
• Typical Single - Carrier N - CDMA Performance: VDD = 28 Volts, IDQ = 1400 mA, Pout = 40 Watts Avg.
, f = 880 MHz, IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13).
Channel Bandwidth = 1.
2288 MHz, PAR = 9.
8 dB @ 0.
01% Probability on CC...