DatasheetsPDF.com

MRFE6S9201HR3

Part Number	MRFE6S9201HR3
Manufacturer	Motorola Semiconductor Products
Description	RF Power Field Effect Transistors
Published	Jul 29, 2009
Detailed Description	www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRFE6S9201H Rev. 1, 12/2008 RF Power Fiel...
Datasheet	MRFE6S9201HR3 PDF File

Overview

www.
DataSheet4U.
com Freescale Semiconductor Technical Data Document Number: MRFE6S9201H Rev.
1, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz.
The high gain and broadband performance of these devices make them ideal for large - signal, common - source amplifier applications in 28 volt base station equipment.
• Typical Single - Carrier N - CDMA Performance: VDD = 28 Volts, IDQ = 1400 mA, Pout = 40 Watts Avg.
, f = 880 MHz, IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13).
Channel Bandwidth = 1.
2288 MHz, PAR = 9.
8 dB @ 0.
01% Probability on CCDF.
Power Gain — 20.
8 dB Drain Efficiency — 31.
3% Device Output Signal PAR — 8.
1 dB @ 0.
01% Probability on CCDF ACPR @ 750 kHz Offset — - 46.
5 dBc in 30 kHz Channel Bandwidth • Capable of Handling 10:1 VSWR, @ 32 Vdc, 880 MHz, Pout = 270 W CW (2 dB Input Overdrive from Rated Pout), Designed for Enha...

Similar Datasheet

MRFE6S9201HR3 RF Power Field Effect Transistors - Motorola Semiconductor Products
MRFE6S9201HSR3 RF Power Field Effect Transistors - Motorola Semiconductor Products

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)