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BLS6G3135-120; BLS6G3135S-120
LDMOS S-Band radar power
transistor
Rev.
01 — 14 August 2007 Preliminary data sheet
1.
Product profile
1.
1 General description
120 W LDMOS power
transistor intended for radar applications in the 3.
1 GHz to 3.
5 GHz range.
Table 1.
Typical performance Typical RF performance at Tcase = 25 °C; tp = 300 µs; δ = 10 %; IDq = 100 mA; in a class-AB production test circuit.
Mode of operation pulsed RF f (GHz) 3.
1 to 3.
5 VDS (V) 32 PL (W) 120 Gp (dB) 11 ηD (%) 43 tr (ns) 20 tf (ns) 6
CAUTION This device is sensitive to ElectroStatic Discharge (ESD).
Therefore care should be taken during transport and handling.
1.
2 Features
I Typical pulsed RF perform...