Part Number
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DB-55008L-318 |
Manufacturer
|
ST Microelectronics |
Description
|
RF power amplifier using 1 x PD55008L-E N-channel enhancement-mode lateral MOSFETs |
Published
|
Jul 29, 2009 |
Detailed Description
|
com
DB-55008L-318
RF power amplifier using 1 x PD55008L-E N-channel enhancement-mode lateral MOSFETs
Pr...
|
Datasheet
|
DB-55008L-318
|
Overview
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DB-55008L-318
RF power amplifier using 1 x PD55008L-E N-channel enhancement-mode lateral MOSFETs
Preliminary Data
Features
■ ■ ■ ■ ■ ■ ■
Excellent thermal stability Frequency: 225 - 318 MHz Supply voltage: 13.
6 V Output power: 8 W Power gain: 13.
5 ± 0.
7 dB Efficiency: 51 % - 79 % BeO free amplifier
Description
The DB-55008L-318 is a common source N-channel enhancement-mode lateral field effect RF power amplifier designed for VHF SEISMIC applications.
Table 1.
Mechanical specification: L = 60 mm, W = 30 mm
Device summary
Order codes DB-55008L-318
February 2009
Rev 1
1/14
www.
st.
com 14
This is preliminary information on a new product now in development or undergoin...
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