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DB-55008L-318

Part Number	DB-55008L-318
Manufacturer	ST Microelectronics
Description	RF power amplifier using 1 x PD55008L-E N-channel enhancement-mode lateral MOSFETs
Published	Jul 29, 2009
Detailed Description	www.DataSheet4U.com DB-55008L-318 RF power amplifier using 1 x PD55008L-E N-channel enhancement-mode lateral MOSFETs Pr...
Datasheet	DB-55008L-318 PDF File

Overview

www.
DataSheet4U.
com DB-55008L-318 RF power amplifier using 1 x PD55008L-E N-channel enhancement-mode lateral MOSFETs Preliminary Data Features ■ ■ ■ ■ ■ ■ ■ Excellent thermal stability Frequency: 225 - 318 MHz Supply voltage: 13.
6 V Output power: 8 W Power gain: 13.
5 ± 0.
7 dB Efficiency: 51 % - 79 % BeO free amplifier Description The DB-55008L-318 is a common source N-channel enhancement-mode lateral field effect RF power amplifier designed for VHF SEISMIC applications.
Table 1.
Mechanical specification: L = 60 mm, W = 30 mm Device summary Order codes DB-55008L-318 February 2009 Rev 1 1/14 www.
st.
com 14 This is preliminary information on a new product now in development or undergoin...

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DB-55008L-318 RF power amplifier using 1 x PD55008L-E N-channel enhancement-mode lateral MOSFETs - ST Microelectronics

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