INCHANGE Semiconductor
isc Silicon
NPN Darlington Power
Transistor
2SD1170
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 120V(Min.
) ·Low Collector Saturation Voltage ·High DC Current Gain ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Driver for solenoid,motor and general purpose applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
120
V
VCEO
Collector-Emitter Voltage
120
V
VEBO IC
Emitter-Base Voltage Collector Current-Continuous
6
V
6
A
ICM
Collector Current-Peak
10
A
IB
Base Current-Continuous
PC
Collector Power Dissipat...