|
Part Number
|
2SD1605 |
|
Manufacturer
|
Inchange Semiconductor |
|
Description
|
Power Transistor |
|
Published
|
Sep 22, 2009 |
|
Datasheet
|
2SD1605
|
Features
isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V(Min) ·High DC Current Gain
: hFE= 1000(Min) @IC= 1.5A ·Complement to Type 2SB1105 ·Minimum Lot-to-Lot variations for robust device
perform...
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