isc Silicon
NPN Power
Transistor
2SD897
DESCRIPTION ·High Breakdown Voltage-
: VCBO= 1500V (Min) ·High Switching Speed ·Low Collector Saturation Voltage-
: VCE(sat)= 5.
0V(Max.
)@ IC= 1A ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in color TV deflection circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1500
V
VCEO
Collector-Emitter Voltage
600
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current- Continuous
1.
5
A
ICM
Collector Current- Peak
5.
0
A
IB
Base Current- Continuous
PC
Collector Power Dissipation @ TC= 25℃
TJ
Ju...