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2SC2481

Power Transistor

Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC2481 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min) ·High Current Capability ·High Collector Power Dissipation ·Complement to Type 2SA1021 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Color TV vertical deflection output ...

Inchange Semiconductor

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