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2SC2411

GME
Part Number 2SC2411
Manufacturer GME
Description Silicon Transistor
Published Apr 15, 2018
Detailed Description Production specification Silicon Epitaxial Planar Transistor FEATURES  Power dissipation: PCM=200Mw.  High ICM(MAX.)...
Datasheet PDF File 2SC2411 PDF File

2SC2411
2SC2411

Overview
Production specification Silicon Epitaxial Planar Transistor FEATURES  Power dissipation: PCM=200Mw.
 High ICM(MAX.
),I CM(MAX.
)=0.
5mA.
 Low VCE(sat)。  Complements the 2SA1036.
Pb Lead-free 2SC2411 APPLICATIONS  NPN Silicon Epitaxial Planar Transistor.
ORDERING INFORMATION Type No.
Marking 2SC2411 CP/CQ/CR SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage 40 VCEO VEBO IC PC Tj,Tstg Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction and Storage Temperature 32 5 500 200 -55 to+150 Units V V V mA mW ℃ C097 Rev.
A www.
gmesemi.
com 1 Production specification Silicon Epitaxial Planar Transistor 2SC2411 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Symbol Test conditions V(BR)CBO IC=100μA,IE=0 V(BR)CEO IC=1mA,IB=0 ...


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