isc Silicon
NPN Power
Transistor
DESCRIPTION ·High Breakdown Voltage-
: V(BR)CBO= 1100V(Min) ·Fast Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for switching
regulator Applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1100
V
VCEO
Collector-Emitter Voltage
800
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
4.
5
A
ICM
Collector Current-Peak
15
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
2
A
100
W
150
℃
Tstg
Storage Temperature Range
...