isc Silicon
NPN Power
Transistor
DESCRIPTION ·Low Collector Saturation Voltage
: VCE(sat)= 0.
6V(Max)@ IC= 2A ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·High speed switching applications.
·High speed DC-DC converter applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
4
A
ICM
Collector Current-Peak
8
A
IB
Base Current-Continuous
Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation
@ Ta=25℃
TJ
Junction Temperature
1
A
...