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IPB80N04S2-H4

Part Number IPB80N04S2-H4
Manufacturer Infineon Technologies
Description Power-Transistor
Published Oct 7, 2009
Detailed Description OptiMOS® Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C pea...
Datasheet IPB80N04S2-H4





Overview
OptiMOS® Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Ultra low Rds(on) • 100% Avalanche tested • Green product (RoHS compliant) IPB80N04S2-H4 IPP80N04S2-H4, IPI80N04S2-H4 Product Summary V DS R DS(on),max (SMD version) ID 40 V 3.
7 mΩ 80 A PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Type IPB80N04S2-H4 IPP80N04S2-H4 IPI80N04S2-0H4 Package PG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Marking 2N04H4 2N04H4 2N04H4 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) I D T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V2) Pulsed drain ...






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