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IPB80N04S2-H4

Infineon Technologies
Part Number IPB80N04S2-H4
Manufacturer Infineon Technologies
Description Power-Transistor
Published Oct 7, 2009
Detailed Description OptiMOS® Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C pea...
Datasheet PDF File IPB80N04S2-H4 PDF File

IPB80N04S2-H4
IPB80N04S2-H4

Overview
OptiMOS® Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Ultra low Rds(on) • 100% Avalanche tested • Green product (RoHS compliant) IPB80N04S2-H4 IPP80N04S2-H4, IPI80N04S2-H4 Product Summary V DS R DS(on),max (SMD version) ID 40 V 3.
7 mΩ 80 A PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Type IPB80N04S2-H4 IPP80N04S2-H4 IPI80N04S2-0H4 Package PG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Marking 2N04H4 2N04H4 2N04H4 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) I D T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V2) Pulsed drain current2) I D,pulse T C=25 °C Avalanche energy, single pulse E AS I D=80A Gate source voltage V GS Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg IEC climatic category; DIN IEC 68-1 Value 80 80 320 660 ±20 300 -55 .
.
.
+175 55/175/56 Unit A mJ V W °C Rev.
1.
1 page 1 2008-02-22 IPB80N04S2-H4 IPP80N04S2-H4, IPI80N04S2-H4 Parameter Symbol Conditions min.
Values typ.
Unit max.
Thermal characteristics2) Thermal resistance, junction - case R thJC Thermal resistance, junction ambient, leaded R thJA - - 0.
5 K/W - - 62 SMD version, device on PCB R thJA minimal footprint 6 cm2 cooling area3) - - 62 - 40 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D= 1 mA 40 - -V Gate threshold voltage V GS(th) V DS=V GS, I D=250 µA 2.
1 3.
0 4.
0 Zero gate voltage drain current I DSS V DS=40 V, V GS=0 V, T j=25 °C - 0.
01 1 µA Gate-source leakage current Drain-source on-state resistance I GSS RDS(on) V DS=40 V, V GS=0 V, T j=125 °C2) V GS=20 V, V DS=0 V V GS=10 V, I D=80 A - - 1 100 1 100 nA 3.
5 4.
0 mΩ V GS=10 V, I D=80 A, SMD version - 3.
2 3.
7 Rev.
1.
1 page 2 2008-02-22 Parameter Symbol IPB80N04S2-H4 IPP80N04S2-H4, IPI...


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