MSB709-RT1
Preferred Device
PNP General Purpose Amplifier
Transistor Surface Mount
MAXIMUM RATINGS (TA = 25°C)
Rating Collector–Base Voltage Collector–Emitter Voltage Emitter–Base Voltage Collector Current – Continuous Collector Current – Peak Symbol V(BR)CBO V(BR)CEO V(BR)EBO IC IC(P) Value –60 –45 –7.
0 –100 –200 Unit Vdc Vdc Vdc mAdc mAdc 2 BASE 1 EMITTER
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COLLECTOR 3
THERMAL CHARACTERISTICS
Characteristic Power Dissipation Junction Temperature Storage Temperature Symbol PD TJ Tstg Max 200 150 –55 ~ +150 Unit mW °C °C
3 2 1
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristic Collector–Emitter Breakdown Voltage (IC = –2.
0 mAdc, IB = 0) Collector–Base Breakdown Voltag...