SPN8822A 6Common-Drain Dual N-Channel
Enhancement Mode MOSFET
DESCRIPTION The SPN8822A is the Common-Drain Dual N-Channel logic enhancement mode power field effect
transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching .
APPLICATIONS Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load Switch DSC LCD Display inverter
FEATURES 20V/5.
8A,RDS(ON)=30mΩ@VGS=4.
5V 20V/5.
0A,RDS(O...