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SPN8822

SYNC POWER
Part Number SPN8822
Manufacturer SYNC POWER
Description Dual N-Channel MOSFET
Published Oct 15, 2009
Detailed Description SPN8822 6Common-Drain Dual N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN8822 is the Common-Drain Dual N-Channel...
Datasheet PDF File SPN8822 PDF File

SPN8822
SPN8822



Overview
SPN8822 6Common-Drain Dual N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN8822 is the Common-Drain Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching .
APPLICATIONS  Power Management in Note book  Portable Equipment  Battery Powered System  DC/DC Converter  Load Switch  DSC  LCD Display inverter FEATURES  20V/8.
0A,RDS(ON)=24mΩ@VGS=4.
5V  20V/7.
0A,RDS(ON)=32mΩ@VGS=2.
5V  20V/3.
0A,RDS(ON)=42mΩ@VGS=1.
8V  Super high density cell design for extremely low RDS (ON)  Exceptional on-resistance and maximum DC current capability  TSSOP–8 package design PIN CONFIGURATION(TSSOP–8) PART MARKING 2020/03/02 Ver.
2 Page 1 SPN8822 6Common-Drain Dual N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 4 5 6 7 8 Symbol D1 / D2 S1 S1 G1 G2 S2 S2 D1 / D2 ORDERING INFORMATION Part Number Package SPN8822TS8RGB TSSOP-8 SPN8822TS8TGB TSSOP-8 ※ SPN8822TS8RGB : 13” Tape Reel ; Pb – Free; Halogen - Free ※ SPN8822TS8TGB : Tube ; Pb – Free; Halogen - Free ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Drain-Source Voltage Gate –Source Voltage Continuous Drain Current(TJ=150℃) Pulsed Drain Current TA=25℃ TA=70℃ Continuous Source Current(Diode Conduction) Power Dissipation TA=25℃ TA=70℃ Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient Symbol VDSS VGSS ID IDM IS PD TJ TSTG RθJA 2020/03/02 Ver.
2 Description Drain Source Source Gate Gate Source Source Drain Part Marking 8822 8822 Typical 20 ±12 7.
4 6.
0 30 2.
3 1.
5 0.
9 -55/150 -55/150 80 Unit V V A A A W ℃ ℃ ℃/W Page 2 SPN8822 6Common-Drain Dual N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=2...



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