DISCRETE SEMICONDUCTORS
DATA SHEET
LFE15600X
NPN microwave power
transistor
Product specification Supersedes data of January 1994 1997 Feb 19
Philips Semiconductors
Product specification
NPN microwave power
transistor
FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigitated structure provides high emitter efficiency • Gold metallization realizes very good stability of the characteristics and excellent lifetime • Multicell geometry gives good balance of dissipated power and low thermal resistance • Internal input and output prematching ensures good stability and allows an easier design of wideband circuits.
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