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LFE15600X

NXP
Part Number LFE15600X
Manufacturer NXP
Description NPN microwave power transistor
Published Mar 22, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET LFE15600X NPN microwave power transistor Product specification Supersedes data of Ja...
Datasheet PDF File LFE15600X PDF File

LFE15600X
LFE15600X

Overview
DISCRETE SEMICONDUCTORS DATA SHEET LFE15600X NPN microwave power transistor Product specification Supersedes data of January 1994 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigitated structure provides high emitter efficiency • Gold metallization realizes very good stability of the characteristics and excellent lifetime • Multicell geometry gives good balance of dissipated power and low thermal resistance • Internal input and output prematching ensures good stability and allows an easier design of wideband circuits.
APPLICATIONS Common emitter, class AB amplifiers in CW conditions for professional applications between 1.
5 GHz and 1.
7 GHz.
DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT448A glued cap metal ceramic flange package, with emitter connected to flange.
Top view book, 4 columns LFE...


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