Part Number
|
IXZ316N60 |
Manufacturer
|
IXYS Corporation |
Description
|
600V (max) Switch-Mode MOSFETS |
Published
|
Oct 29, 2009 |
Detailed Description
|
IXZ316N60
Z-MOS RF Power MOSFET
N-Channel Enhancement Mode Switch Mode RF MOSFET Low Capacitance Z-MOSTM MOSFET Process ...
|
Datasheet
|
IXZ316N60
|
Overview
IXZ316N60
Z-MOS RF Power MOSFET
N-Channel Enhancement Mode Switch Mode RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for RF Operation Ideal for Class C, D, & E Applications
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt Test Conditions
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient Tc = 25°C Tc = 25°C, pulse width limited by TJM Tc = 25°C Tc = 25°C IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS, Tj ≤ 150°C, RG = 0.
2Ω IS = 0
VDSS ID25 RDS(on) PDC
= = = =
600 V 18.
0 A 0.
44 Ω 880 W
Maximum Ratings 600 600 ±20 ±30 18 90 18 TBD V V V V A A A mJ
5 V/ns 200 V/ns
DRAIN
PDC PDHS PDAMB RthJC RthJHS
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Tc = 25°C, Derate 4.
4W/°C above 25°C Tc = 25°C...
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