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IXZ316N60

Part Number	IXZ316N60
Manufacturer	IXYS Corporation
Description	600V (max) Switch-Mode MOSFETS
Published	Oct 29, 2009
Detailed Description	IXZ316N60 Z-MOS RF Power MOSFET N-Channel Enhancement Mode Switch Mode RF MOSFET Low Capacitance Z-MOSTM MOSFET Process ...
Datasheet	IXZ316N60 PDF File

Overview

IXZ316N60 Z-MOS RF Power MOSFET N-Channel Enhancement Mode Switch Mode RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for RF Operation Ideal for Class C, D, & E Applications Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient Tc = 25°C Tc = 25°C, pulse width limited by TJM Tc = 25°C Tc = 25°C IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS, Tj ≤ 150°C, RG = 0.
2Ω IS = 0 VDSS ID25 RDS(on) PDC = = = = 600 V 18.
0 A 0.
44 Ω 880 W Maximum Ratings 600 600 ±20 ±30 18 90 18 TBD V V V V A A A mJ 5 V/ns >200 V/ns DRAIN PDC PDHS PDAMB RthJC RthJHS www.
DataSheet4U.
com Tc = 25°C, Derate 4.
4W/°C above 25°C Tc = 25°C...

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IXZ316N60 600V (max) Switch-Mode MOSFETS - IXYS Corporation

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