Ordering number:EN2531A
NPN Epitaxial Planar Silicon
Transistor
2SC4204
High-hFE, AF Amplifier Applications
Applications
· AF amplifier, various drivers.
Package Dimensions
unit:mm 2003B
[2SC4204]
5.
0 4.
0 4.
0
Features
· Adoption of MBIT process.
· High DC current gain (hFE=800 to 3200).
· Large current capacity (IC=0.
7A).
· Low collector-to-emitter saturation voltage (VCE(sat)≤0.
5V).
· High VEBO (VEBO≥15V).
0.
45 0.
5 0.
6 2.
0 0.
45 0.
44 14.
0
5.
0
1
2
3
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage ...