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C4210

Toshiba
Part Number C4210
Manufacturer Toshiba
Description 2SC4210
Published Jun 9, 2015
Detailed Description 2SC4210 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4210 Audio Power Amplifier Applications • High ...
Datasheet PDF File C4210 PDF File

C4210
C4210


Overview
2SC4210 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4210 Audio Power Amplifier Applications • High DC current gain: hFE = 100~320 • Complementary to 2SA1621 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range VCBO VCEO VEBO IC IB PC Tj Tstg 35 30 5 800 160 200 150 −55~150 V V V mA mA mW °C °C Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Symbol Test Condition ICBO VCB = 35 V, IE = 0 IEBO VEB = 5 V, IC = 0 V (BR) CEO IC = 10 mA, IB = 0 hFE (1) (Note) VCE = 1 V, IC = 100 mA hFE (2) VCE (sat) VBE fT Cob VCE = 1 V, IC = 700 mA IC = 500 mA, IB = 20 mA VCE = 1 V, IC = 10 mA VCE = 5 V, IC = 10 mA VCB = 10 V, IE = 0, f = 1 MHz Note: hFE (1) classification O: 100~200, Y: 160~320 Marking JEDEC TO-236MOD JEITA SC-59 TOSHIBA 2-3F1A Weight: 0.
012 g (typ.
) Min Typ.
Max Unit ⎯ ⎯ 0.
1 μA ⎯ ⎯ 0.
1 μA 30 ⎯ ⎯ V 100 ⎯ 320 35 ⎯ ⎯ ⎯ ⎯ 0.
5 V 0.
5 ⎯ 0.
8 V ⎯ 120 ⎯ MHz ⎯ 13 ⎯ pF 1 2007-11-01 2SC4210 2 2007-11-01 2SC4210 RESTRICTIO...



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