Schottky Barrier Diodes (SBD)
MA27D30
Silicon epitaxial planar type
Unit: mm
For super high speed switching
0.
27+0.
05 –0.
02 0.
12+0.
05 –0.
02
■ Features
• Small reverse current: IR 2 µA (at VR = 30 V) • Optimum for high frequency rectification because of its short reverse recovery time trr .
1 1.
00±0.
05 1.
40±0.
05
2
■ Absolute Maximum Ratings Ta = 25°C
Parameter Reverse voltage Repetitive peak reverse voltage Forward current (Average) Peak forward current Non-repetitive peak forward surge current
*
0.
60±0.
05 5°
VR VRRM IF(AV) IFM IFSM Tj Tstg
30 30 100 200 1 125 −55 to +125
V
0 to 0.
01
V mA mA A °C °C
1: Anode 2: Cathode SSSMini2-F2 Package
Junction temperature Storage temperatur...