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MA27D30

Panasonic Semiconductor
Part Number MA27D30
Manufacturer Panasonic Semiconductor
Description Schottky Barrier Diodes
Published Dec 23, 2009
Detailed Description Schottky Barrier Diodes (SBD) MA27D30 Silicon epitaxial planar type Unit: mm For super high speed switching 0.27+0.05 ...
Datasheet PDF File MA27D30 PDF File

MA27D30
MA27D30

Overview
Schottky Barrier Diodes (SBD) MA27D30 Silicon epitaxial planar type Unit: mm For super high speed switching 0.
27+0.
05 –0.
02 0.
12+0.
05 –0.
02 ■ Features • Small reverse current: IR < 2 µA (at VR = 30 V) • Optimum for high frequency rectification because of its short reverse recovery time trr .
1 1.
00±0.
05 1.
40±0.
05 2 ■ Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage Repetitive peak reverse voltage Forward current (Average) Peak forward current Non-repetitive peak forward surge current * 0.
60±0.
05 5° VR VRRM IF(AV) IFM IFSM Tj Tstg 30 30 100 200 1 125 −55 to +125 V 0 to 0.
01 V mA mA A °C °C 1: Anode 2: Cathode SSSMini2-F2 Package Junction temperature Storage temperature Marking Symbol: 8N Note) * : The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive) ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Forward voltage Symbol VF1 VF2 Reverse current www.
DataSheet4U.
com IR1 IR2 Terminal capacitance Reverse recovery time * Conditions IF = 10...


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