TPC8009-H
TOSHIBA Field Effect
Transistor Silicon N Channel MOS Type (High speed U-MOSIII)
TPC8009-H
High Speed and High Efficiency DC-DC Converters Notebook PC Applications Portable Equipment Applications
· · · · · · · Small footprint due to small and thin package High speed switching Small gate charge: Qg = 29 nC (typ.
) Low drain-source ON resistance: RDS (ON) = 8 mΩ (typ.
) High forward transfer admittance: |Yfs| = 16 S (typ.
) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.
1 to 2.
3 V (VDS = 10 V, ID = 1 mA) Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kW) Gate-source voltage Drain current DC Pulse (...