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TPC8009-H

Toshiba Semiconductor
Part Number TPC8009-H
Manufacturer Toshiba Semiconductor
Description N-Channel MOSFET
Published Jan 17, 2010
Detailed Description TPC8009-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (High speed U-MOSIII) TPC8009-H High Speed and Hig...
Datasheet PDF File TPC8009-H PDF File

TPC8009-H
TPC8009-H

Overview
TPC8009-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (High speed U-MOSIII) TPC8009-H High Speed and High Efficiency DC-DC Converters Notebook PC Applications Portable Equipment Applications · · · · · · · Small footprint due to small and thin package High speed switching Small gate charge: Qg = 29 nC (typ.
) Low drain-source ON resistance: RDS (ON) = 8 mΩ (typ.
) High forward transfer admittance: |Yfs| = 16 S (typ.
) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.
1 to 2.
3 V (VDS = 10 V, ID = 1 mA) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kW) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b) www.
DataSheet4U.
com Single pulse avalanche energy Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR Rating 30 30 ±20 13 52 1.
9 Unit V V V A JEDEC JEITA TOSHIBA ― ― 2-6J1B Drain power dissipation W Weight: 0.
080 g (typ.
) 1.
0 W Circuit Configuration 219 13 0.
19 150 -55 to 150 mJ A mJ °C °C 1 2 3 4 8 7 6 5 (Note 3) Avalanche current Repetitive avalanche energy (Note 2a) (Note 4) Channel temperature Storage temperature range EAR Tch Tstg Note: (Note 1), (Note 2), (Note 3), (Note 4) Please see next page.
This transistor is an electrostatic sensitive device.
Please handle with caution.
1 2002-01-17 TPC8009-H Thermal Characteristics Characteristics Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Symbol Rth (ch-a) Max 65.
8 Unit °C/W Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Rth (ch-a) 125 °C/W Marking (Note 5) TPC8009 H ※ TYPE Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) FR-4 25.
4 ´ 25.
4 ´ 0.
8 (Unit: mm) FR-4 25.
4 ´ 25.
4 ´ 0.
8 (Unit: mm) (a) (b) Note 3: VDD = 24 V, Tch = 25°C (initial), L = 1.
0 mH, RG = 25 W, IAR = 1...


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