2SD1403
GENERAL DESCRIPTION
Silicon Diffused Power
Transistor
Highvoltage,high-speed switching
npn transistors in a plastic envelope with integrated efficiency diode,primarily for use in horizontal deflection circuites of colour television receivers
QUICK REFERENCE DATA
SYMBOL
MT-100
CONDITIONS VBE = 0V TYP
VCESM VCEO IC ICM Ptot VCEsat Icsat VF tf
PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Diode forward voltage Fall time
Tmb 25 IC =4.
0A; IB = 1.
0A f = 16KHz IF = 5.
0A ICsat = 5.
0A; f = 16KHz
1.
6 0.
4
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