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D1404

INCHANGE
Part Number D1404
Manufacturer INCHANGE
Description Silicon NPN Power Transistor
Published Feb 16, 2015
Detailed Description INCHANGE Semiconductor isc Silicon NPN Power Transistor DESCRIPTION ·High Collector Current Capability ·High Collector ...
Datasheet PDF File D1404 PDF File

D1404
D1404


Overview
INCHANGE Semiconductor isc Silicon NPN Power Transistor DESCRIPTION ·High Collector Current Capability ·High Collector Power Dissipation Capability ·Built-in Damper Diode APPLICATIONS ·B/W TV horizontal deflection output applications.
·High voltage switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous ICM Collector Current-Peak 300 V 150 V 6V 7A 15 A IB Base Current-Continuous Collector Power Dissipation Ta=25℃ PC Collector Power Dissipation TC=25℃ Tj Junction Temperature Tstg Storage Ttemperature Range 2A 2 W 25 150 ℃ -55~150 ℃ isc Product Specification 2SD1404 isc website：www.
iscsemi.
cn 1 INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SD1404 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; L= 50mH V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 0.
1A; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.
5A VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 0.
5A ICES Collector Cutoff Current VCE= 250V; VBE= 0 hFE DC Current Gain IC= 5A ; VCE= 1.
5V fT Current-Gain—Bandwidth Product IC= 0.
2A; VCE= 10V VECF C-E Diode Forward Voltage IF= 6A tf Fall Time ICP= 5A; IB1(end)= 0.
5A MIN TYP.
MAX UNIT 150 V 300 V 6V 1.
5 V 1.
5 V 1 mA 10 18 MHz 1.
8 V 1.
0 μs isc website：www.
iscsemi.
cn 2 ...


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