CMT35N03G

CMT35N03G 25V N-CHANNEL ENHANCEMENT-MODE MOSFET APPLICATION ‹ ‹ ‹ Vds=25V RDS(ON)=8.5 mΩ (Max.) , VGS @10V, Ids@30A RDS(ON)=13 mΩ (Max.), VGS @4.5V, Ids@30A FEATURES ‹ ‹ ‹ Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current PIN CONFIGURATION TO-252 SYMBOL D Front View ...