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CMT35N03G

Champion Microelectronic
Part Number CMT35N03G
Manufacturer Champion Microelectronic
Description 25V N-CHANNEL ENHANCEMENT-MODE MOSFET
Published Jan 27, 2010
Detailed Description CMT35N03G 25V N-CHANNEL ENHANCEMENT-MODE MOSFET APPLICATION ‹ ‹ ‹ Vds=25V RDS(ON)=8.5 mΩ (Max.) , VGS @10V, Ids@30A RDS(...
Datasheet PDF File CMT35N03G PDF File

CMT35N03G
CMT35N03G

Overview
CMT35N03G 25V N-CHANNEL ENHANCEMENT-MODE MOSFET APPLICATION ‹ ‹ ‹ Vds=25V RDS(ON)=8.
5 mΩ (Max.
) , VGS @10V, Ids@30A RDS(ON)=13 mΩ (Max.
), VGS @4.
5V, Ids@30A FEATURES ‹ ‹ ‹ Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current PIN CONFIGURATION TO-252 SYMBOL D Front View GATE SOURCE DRAIN G S 1 2 3 N-Channel MOSFET Maximum Ratings and Thermal Characteristics (TA=25℃ unless otherwise notes) Rating Drain - Source Voltage www.
DataSheet4U.
com Symbol VDS VGS ID IDM TA=25℃ TA=75℃ PD PD TJ / TSTG RθJC 2) Value 25 ±20 30 260 60 23 -55 to150 1.
8 50 Unit V V A A W W ℃ ℃/W ℃/W Gate -Source Voltage Continuous Drain Current Pulsed Drain Current 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range Junction – to –Case Thermal Resistance Junction – to Ambient Thermal Resistance (PCB mount) RθJA Note : 1.
Repetitive Rating : Pulse width limited by the Maximum junction temperation 2 2.
1-in 2oz Cu PCB board 3.
Guaranteed by design ; not subject to production testing 2007/03/15 Rev1.
0 Champion Microelectronic Corporation Page 1 CMT35N03G 25V N-CHANNEL ENHANCEMENT-MODE MOSFET ORDERING INFORMATION Part Number CMT35N03GN252 Package TO-252 ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise notes) Symbol Parameter Drain-Source Breakdown Voltage Drain-Source On-State Resistancem Gate Threshold Voltage Forward Transconductance Zero Gate Voltage Drain Current Test Conditions VGS=0V, ID=-250uA VGS=4.
5V, ID=30A VGS=10V, ID=30A VDS=VGS, ID=-250uA VDS=15V, ID=15A VDS=25V, VGS=0V VGS=±20V , VDS=0V ID=35A VDS=15V VGS=10V VDD=15V ID=1A RG=6Ω RL=15Ω VGEN=10V VGS=0V VDS=15V f=1.
0MHz Min.
25 1 - Typ.
9.
5 6.
5 1.
8 12 10 3.
5 3 12 4 32 6 1180 270 145 Max.
13.
0 9.
0 3 1 ±100 25 10 65 - Units V mΩ mΩ V S uA nA nC nC nC ns ns ns ns pF pF pF Static BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Gate-Source Forward Leakage 3) Dynamic Qg Qgs Qgd td(on) tr Total Gate Charge Gate-Source...


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