Freescale Semiconductor Technical Data
Document Number: MRF8S18120H Rev.
0, 9/2009
RF Power Field Effect
Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for GSM and GSM EDGE base station applications with frequencies from 1805 to 1880 MHz.
Can be used in Class AB and Class C for all typical cellular base station modulation formats.
• Typical GSM Performance: VDD = 28 Volts, IDQ = 800 mA, Pout = 72 Watts CW
Frequency 1805 MHz 1840 MHz 1880 MHz Gps (dB) 18.
2 18.
6 18.
7 hD (%) 49.
8 51.
4 53.
9
MRF8S18120HR3 MRF8S18120HSR3
1805 - 1880 MHz, 72 W CW, 28 V GSM, GSM EDGE LATERAL N - CHANNEL RF POWER MOSFETs
• Capable of Handling 7:1 VSWR, @ 32 Vdc, 1840 MHz, 150 Watts CW Output...