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MRF8S9170NR3

RF Power Field Effect Transistor

Description

Freescale Semiconductor Technical Data Document Number: MRF8S9170N Rev. 0, 9/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 920 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. • Typical Single - C...


Freescale Semiconductor

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