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MRF8S9170NR3

Part Number	MRF8S9170NR3
Manufacturer	Freescale Semiconductor
Description	RF Power Field Effect Transistor
Published	Feb 9, 2010
Detailed Description	Freescale Semiconductor Technical Data Document Number: MRF8S9170N Rev. 0, 9/2009 RF Power Field Effect Transistor N ...
Datasheet	MRF8S9170NR3 PDF File

Overview

Freescale Semiconductor Technical Data Document Number: MRF8S9170N Rev.
0, 9/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 920 to 960 MHz.
Can be used in Class AB and Class C for all typical cellular base station modulation formats.
• Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1000 mA, Pout = 50 Watts Avg.
, IQ Magnitude Clipping, Channel Bandwidth = 3.
84 MHz, Input Signal PAR = 7.
5 dB @ 0.
01% Probability on CCDF.
Frequency 920 MHz 940 MHz 960 MHz Gps (dB) 19.
3 19.
1 18.
9 hD (%) 36.
5 36.
1 36.
0 Output PAR (dB) 6.
0 6.
1 6.
0 ACPR (dBc) - 36.
6 - 36.
7 - 36.
1 MRF8S9170...

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MRF8S9170NR3 RF Power Field Effect Transistor - Freescale Semiconductor

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