Freescale Semiconductor Technical Data
Document Number: MRF8S9200N Rev.
0, 8/2009
RF Power Field Effect
Transistor
N - Channel Enhancement - Mode Lateral MOSFET
Designed for CDMA base station applications with frequencies from 920 to 960 MHz.
Can be used in Class AB and Class C for all typical cellular base station modulation formats.
• Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1400 mA, Pout = 58 Watts Avg.
, IQ Magnitude Clipping, Channel Bandwidth = 3.
84 MHz, Input Signal PAR = 7.
5 dB @ 0.
01% Probability on CCDF.
Frequency 920 MHz 940 MHz 960 MHz Gps (dB) 19.
9 19.
9 19.
5 hD (%) 37.
7 37.
1 36.
8 Output PAR (dB) 6.
1 6.
1 6.
0 ACPR (dBc) - 36.
2 - 36.
6 - 36.
0
MRF8S9200...