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MRF8S9200NR3

NXP
Part Number MRF8S9200NR3
Manufacturer NXP
Description RF Power Field Effect Transistor
Published Mar 19, 2024
Detailed Description Freescale Semiconductor Technical Data Document Number: MRF8S9200N Rev. 1, 5/2010 RF Power Field Effect Transistor N--...
Datasheet PDF File MRF8S9200NR3 PDF File

MRF8S9200NR3
MRF8S9200NR3

Overview
Freescale Semiconductor Technical Data Document Number: MRF8S9200N Rev.
1, 5/2010 RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 920 to 960 MHz.
Can be used in Class AB and Class C for all typical cellular base station modulation formats.
• Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ = 1400 mA, Pout = 58 Watts Avg.
, IQ Magnitude Clipping, Channel Bandwidth = 3.
84 MHz, Input Signal PAR = 7.
5 dB @ 0.
01% Probability on CCDF.
Frequency Gps (dB) ηD Output PAR ACPR (%) (dB) (dBc) 920 MHz 940 MHz 960 MHz 19.
9 37.
7 19.
9 37.
1 19.
5 36.
8 6.
1 --36.
2 6.
1 --36.
6 6.
0 -...


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