Freescale Semiconductor Technical Data
Document Number: MRF8P9300H Rev.
0, 11/2009
RF Power Field Effect
Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for CDMA and multicarrier GSM base station applications with frequencies from 860 to 960 MHz.
Can be used in Class AB and Class C for all typical cellular base station modulation formats.
• Typical Single- Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 2400 mA, Pout = 100 Watts Avg.
, IQ Magnitude Clipping, Channel Bandwidth = 3.
84 MHz, Input Signal PAR = 7.
5 dB @ 0.
01% Probability on CCDF.
Frequency 920 MHz 940 MHz 960 MHz Gps (dB) 19.
6 19.
6 19.
4 hD (%) 35.
4 35.
6 35.
8 Output PAR (dB) 6.
0 6.
0 5.
9 ACPR (dBc) - 37.
3 ...