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MRF8P9300HSR6

Part Number	MRF8P9300HSR6
Manufacturer	Freescale Semiconductor
Description	RF Power Field Effect Transistors
Published	Feb 9, 2010
Detailed Description	Freescale Semiconductor Technical Data Document Number: MRF8P9300H Rev. 0, 11/2009 RF Power Field Effect Transistors ...
Datasheet	MRF8P9300HSR6 PDF File

Overview

Freescale Semiconductor Technical Data Document Number: MRF8P9300H Rev.
0, 11/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA and multicarrier GSM base station applications with frequencies from 860 to 960 MHz.
Can be used in Class AB and Class C for all typical cellular base station modulation formats.
• Typical Single- Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 2400 mA, Pout = 100 Watts Avg.
, IQ Magnitude Clipping, Channel Bandwidth = 3.
84 MHz, Input Signal PAR = 7.
5 dB @ 0.
01% Probability on CCDF.
Frequency 920 MHz 940 MHz 960 MHz Gps (dB) 19.
6 19.
6 19.
4 hD (%) 35.
4 35.
6 35.
8 Output PAR (dB) 6.
0 6.
0 5.
9 ACPR (dBc) - 37.
3 ...

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MRF8P9300HSR6 RF Power Field Effect Transistors - Freescale Semiconductor

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