2SC4297
Silicon
NPN Triple Diffused Planar
Transistor (High Voltage and High Speed Switchihg
Transistor) sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC4297 500 400 10 12(Pulse24) 4 75(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C
com
Application : Switching
Regulator and General Purpose External Dimensions FM100(TO3PF)
0.
8±0.
2 15.
6±0.
2 5.
5±0.
2 3.
45 ±0.
2 5.
5 ø3.
3±0.
2 1.
6
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=500V VEB=10V IC=25mA VCE=4V, IC=7A IC=7A, IB=1.
4A IC=7A, IB=1.
4A VCE=12V, IE=–1A VCB=10V, f=1MHz
(Ta=25°C) 2SC4297 100max 100max 400min 10 to 30 0.
5max 1.
3max 10typ 105typ V V...