JDH3D01FV
TOSHIBA Diode Silicon Epitaxial
Schottky Barrier Type
JDH3D01FV
○ For wave detection
¾ Small package
0.
22±0.
05 1.
2±0.
05 0.
32±0.
05 3 0.
13±0.
05 1.
ANODE1 2.
CATHODE2 3.
CATHODE1/ANODE2 0.
8±0.
05
Unit: mm
1.
2±0.
05
Absolute Maximum Ratings (Ta = 25°C)
Characteristic Reverse voltage Forward current Junction temperature Storage temperature range Symbol VR IF Tj Tstg Rating 4 25 125 −55~125 Unit
0.
8±0.
05
0.
4 0.
4
1 2
mA °C °C
Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
ope...