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JDH3D01FV

Toshiba Semiconductor
Part Number JDH3D01FV
Manufacturer Toshiba Semiconductor
Description Diode Silicon Epitaxial Schottky Barrier Type
Published Feb 19, 2010
Detailed Description JDH3D01FV TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type JDH3D01FV ○ For wave detection ¾ Small package 0.22±0.0...
Datasheet PDF File JDH3D01FV PDF File

JDH3D01FV
JDH3D01FV

Overview
JDH3D01FV TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type JDH3D01FV ○ For wave detection ¾ Small package 0.
22±0.
05 1.
2±0.
05 0.
32±0.
05 3 0.
13±0.
05 1.
ANODE1 2.
CATHODE2 3.
CATHODE1/ANODE2 0.
8±0.
05 Unit: mm 1.
2±0.
05 Absolute Maximum Ratings (Ta = 25°C) Characteristic Reverse voltage Forward current Junction temperature Storage temperature range Symbol VR IF Tj Tstg Rating 4 25 125 −55~125 Unit 0.
8±0.
05 0.
4 0.
4 1 2 mA °C °C Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
VESM JEDEC JEITA TOSHIBA 0.
5±0.
05 V ― ― 1-2S1C Weight:0.
0015g(typ.
) Electrical Characteristics (Ta = 25°C) Characteristic Forward voltage Forward current Reverse current Capacitance Symbol VF IF IR IF = 2 mA VF = 0.
5 V VR = 0.
5 V Test Condition Min ⎯ 25 ⎯ ⎯ Typ.
0.
25 ⎯ ⎯ 0.
6 Max ⎯ ⎯ 25 ⎯ Unit V mA uA pF CT VR = 0.
2 V, f = 1 MHz Note: Signal level when capacitance is measured: Vsig = 20 mVrms Marking B H Caution This device is sensitive to electrostatic discharge.
Operators should wear antistatic clothing, and containers and other objects that come into direct contact with the product should be made of antistatic materials.
1 2007-11-01 JDH3D01FV ＩＦ-VF 1.
E+00 Ｔａ＝２５℃ 1.
E-01 1.
E-02 IF(A) 1.
E-03 1.
E-04 1.
E-05 1.
E-06 0 0.
1 0.
2 0.
3 0.
4 0.
5 0.
6 0.
7 0.
8 0.
9 VF(V) ＩＲ-VR 1.
E+00 1.
E-01 Ｔａ＝２５℃ 1.
E-02 IR(A) 1.
E-03 1.
E-04 1.
E-05 1.
E-06 1.
E-07 0 1 2 3 4 5 6 VR(V) 2 2007-11-01 JDH3D01FV ＣＴ-ＶＲ 1 f=1MHz Ta=25℃ CT(pF) 0.
1...


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