TPCP8101
TOSHIBA Field Effect
Transistor Silicon P-Channel MOS Type (U-MOS III)
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TPCP8101
Notebook PC Applications Portable Equipment Applications
• • • • • Small footprint due to small and thin package
2.
4±0.
1 0.
475
1 4
Unit: mm
0.
33±0.
05 0.
05 M A
8 5
High forward transfer admittance: |Yfs| = 14 S (typ.
) Low leakage current: IDSS = -10 μA (max) (VDS = -20 V) Enhancement model: Vth = -0.
5 to -1.
2 V (VDS = -10 V, ID = -200 μA)
S
0.
65 2.
9±0.
1
B A
0.
05 M B
0.
8±0.
05
Absolute Maximum Ratings (Ta = 25°C)
Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) (t = 5 s) (Note 2a) (t = 5 s) (Note 2b)...