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TPCP8105

Toshiba Semiconductor
Part Number TPCP8105
Manufacturer Toshiba Semiconductor
Description MOSFETs
Published Aug 27, 2014
Detailed Description TPCP8105 MOSFETs Silicon P-Channel MOS (U-MOS) TPCP8105 1. Applications • • • Lithium-Ion Secondary Batteries Power Ma...
Datasheet PDF File TPCP8105 PDF File

TPCP8105
TPCP8105

Overview
TPCP8105 MOSFETs Silicon P-Channel MOS (U-MOS) TPCP8105 1.
Applications • • • Lithium-Ion Secondary Batteries Power Management Switches Notebook PCs 2.
Features (1) (2) (3) (4) Small, thin package Low drain-source on-resistance: RDS(ON) = 13.
8 mΩ (typ.
) (VGS = -4.
5 V) Low leakage current: IDSS = -10 µA (max) (VDS = -20 V) Enhancement mode: Vth = -0.
5 to -1.
2 V (VDS = -10 V, ID = -1 mA) 3.
Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain PS-8 4.
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Power dissipation Single-pulse av...


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