TPCP8F01
TOSHIBA Multi-chip Device Silicon
PNP Epitaxial
Transistor , Field Effect
Transistor Silicon N Channel MOS Type
TPCP8F01
2.
4±0.
1 0.
475
1 4
• • •
High DC current gain: hFE = 200 to 500 (IC = −0.
5 A) (
PNP Transistor) Low collector-emitter saturation: VCE (sat) = −0.
19 V (max) (
PNP Transistor) High-speed switching: tf = 40 ns (typ.
) (
PNP Transistor)
0.
65 2.
9±0.
1
B A
0.
05 M B
0.
8±0.
05
S
0.
025
S
0.
17±0.
02
0.
28 +0.
1 -0.
11
+0.
13
1.
12 -0.
12
Absolute Maximum Ratings (Ta = 25°C)
Transistor
Characteristics Collector-base voltage Symbol VCBO VCEO VEBO DC Pulse IC ICP IB PC (Note 1) Tj Rating −30 −20 −7 −3.
0 −5.
0 −250 1.
0 150 Unit V
1.
Source 2.
Collector 3.
Collect...