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TPCP8F01

Part Number	TPCP8F01
Manufacturer	Toshiba Semiconductor
Description	Multi-chip Device Epitaxial Transistor
Published	Feb 20, 2010
Detailed Description	TPCP8F01 TOSHIBA Multi-chip Device Silicon PNP Epitaxial Transistor , Field Effect Transistor Silicon N Channel MOS Type...
Datasheet	TPCP8F01 PDF File

Overview

TPCP8F01 TOSHIBA Multi-chip Device Silicon PNP Epitaxial Transistor , Field Effect Transistor Silicon N Channel MOS Type www.
DataSheet4U.
com TPCP8F01 2.
4±0.
1 0.
475 1 4 • • • High DC current gain: hFE = 200 to 500 (IC = −0.
5 A) (PNP Transistor) Low collector-emitter saturation: VCE (sat) = −0.
19 V (max) (PNP Transistor) High-speed switching: tf = 40 ns (typ.
) (PNP Transistor) 0.
65 2.
9±0.
1 B A 0.
05 M B 0.
8±0.
05 S 0.
025 S 0.
17±0.
02 0.
28 +0.
1 -0.
11 +0.
13 1.
12 -0.
12 Absolute Maximum Ratings (Ta = 25°C) Transistor Characteristics Collector-base voltage Symbol VCBO VCEO VEBO DC Pulse IC ICP IB PC (Note 1) Tj Rating −30 −20 −7 −3.
0 −5.
0 −250 1.
0 150 Unit V 1.
Source 2.
Collector 3.
Collect...

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TPCP8F01 Multi-chip Device Epitaxial Transistor - Toshiba Semiconductor

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