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Part Number
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TIM5964-6UL |
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Manufacturer
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Toshiba Semiconductor |
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Title
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MICROWAVE POWER GaAs FET |
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Description
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MICROWAVE POWERwww..com GaAs FET MICROWAVE SEMICONDUCTOR
TIM5964-6UL
TECHNICAL DATA FEA...
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Features
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HIGH POWER P1dB=38.5dBm at 5.9GHz to 6.4GHz HIGH GAIN G1dB=10.0dB at 5.9GHz to 6.4GHz BROAD BAND INTERNALLY MATCHE...
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Published
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Feb 22, 2010 |
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Datasheet
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TIM5964-6UL PDF File
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Features
HIGH POWER P1dB=38.5dBm at 5.9GHz to 6.4GHz HIGH GAIN G1dB=10.0dB at 5.9GHz to 6.4GHz BROAD BAND INTERNALLY MATCHED FET HERMETICALLY SEALED PACKAGE
RF PERFORMANCE SPECIFICATIONS
CHARACTERISTICS Output Power at 1dB Gain Compression Point Powe...
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