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TIM5964-6UL

Toshiba Semiconductor
Part Number TIM5964-6UL
Manufacturer Toshiba Semiconductor
Description MICROWAVE POWER GaAs FET
Published Feb 22, 2010
Detailed Description MICROWAVE POWERcom GaAs FET MICROWAVE SEMICONDUCTOR TIM5964-6UL TECHNICAL DATA FEATURES „ HIGH POWER P...
Datasheet PDF File TIM5964-6UL PDF File

TIM5964-6UL
TIM5964-6UL

Overview
MICROWAVE POWERcom GaAs FET MICROWAVE SEMICONDUCTOR TIM5964-6UL TECHNICAL DATA FEATURES „ HIGH POWER P1dB=38.
5dBm at 5.
9GHz to 6.
4GHz „ HIGH GAIN G1dB=10.
0dB at 5.
9GHz to 6.
4GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Gain Flatness Power Added Efficiency 3rd Order Intermodulation Distortion Drain Current Channel Temperature Rise IDS2 ΔTch IDS1 ΔG G1dB SYMBOL P1dB ( Ta= 25°C ) UNIT dBm dB A dB % MIN.
37.
5 9.
0 ⎯ ⎯ ⎯ -44 ⎯ ⎯ TYP.
MAX.
38.
5 10.
0 1.
6 ⎯ 40 -47 1.
6 ⎯ ⎯ ⎯ 1.
9 ±0.
6 ⎯ ⎯ 1.
9 80 CONDITIONS VDS= 10V...


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