Part Number
|
TSM2N60S |
Manufacturer
|
Taiwan Semiconductor Company |
Description
|
600V N-Channel Power MOSFET |
Published
|
Mar 5, 2010 |
Detailed Description
|
TSM2N60S
600V N-Channel Power MOSFET
SOT-223
Pin Definition: 1. Gate 2. Drain 3. Source
com
PRODUCT SUM...
|
Datasheet
|
TSM2N60S
|
Overview
TSM2N60S
600V N-Channel Power MOSFET
SOT-223
Pin Definition: 1.
Gate 2.
Drain 3.
Source
com
PRODUCT SUMMARY VDS (V)
600
RDS(on)(Ω)
5 @ VGS =10V
ID (A)
0.
6
General Description
The TSM2N60S is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time.
In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes.
The new energy efficient design also offers a drain- to-source diode with a fast recovery time.
Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for...
Similar Datasheet